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IGBT with Diode
PLUS247
TM
package
IXSK 40N60CD1 IXSX 40N60CD1
Short Circuit SOA Capability
Preliminary data
VCES IC25 VCE(sat) tfi(typ)
= = = =
600 V 75 A 2.5 V 70 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 W, non repetitive TC = 25C
Maximum Ratings 600 600 20 30 75 40 150 ICM = 80 @ 0.8 VCES 10 280 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C C g g
PLUS 247TM (IXSX)
C (TAB) G C E
TO-264 AA (IXSK)
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Mounting torque
(TO-264)
0.9/6 Nm/lb.in. 300 10 6
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-264 PLUS247
Features * International standard packages * Guaranteed Short Circuit SOA capability * High frequency IGBT and antiparallel FRED in one package * Latest generation HDMOSTM process * MOS Gate turn-on - drive simplicity * Fast Recovery,low leakage Epitaxial Diode - soft recovery with low IRM Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * PLUS 247TM package for clip or spring mounting * Space savings (two devices in one package) * Reduces assembly time and cost
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 150C 7 650 5 100 2.5 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 4 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98574A (7/00)
(c) 2000 IXYS All rights reserved
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IXSK 40N60CD1 IXSX 40N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 3700 VGS = 0 V, VDS = 25 V, f = 1 MHz 440 60 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 88 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 50 50 70 70 1.0 50 50 2.2 140 140 1.7 140 120 1.7 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.48 K/W 0.15 K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
gfs C iss Coss C rss Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
PLUS247TM (IXSX)
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 2 35 2.5 V A ns 0.75 K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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